The usual method of determining DRAM node is to take half the minimum WL or BL pitch. That places this DRAM at the nm process node. A 6F 2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy. PURPOSE: A semiconductor memory device provided with 6F2 dynamic random access memory(DRAM) is provided to increase a sensing margin by enlarging.
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At least xram of these manufacturing defects can have their failure mode accelerated by voltage stressing the isolation gates 56 by applying a voltage greater than what would ordinarily be expected during normal operation. Isolation between each cell pair and its neighboring cell pairs along a given bit line is obtained through isolation transistors, such as transistors 30 and 31 66f2 Figure 1.
Search Expert Search Quick Search. The computer system of claim 27, wherein the DRAM array further comprises a second transistor having first and second load electrodes and a control electrode configured to accept a second control signal, the first load electrode being coupled to the isolation gate and the second load electrode being configured to be coupled to ground.
A cell plate not shown formed of a conductive material such as doped polysilicon extends across tops of the capacitor containers 58 and forms a common electrode or signal ground for capacitors formed within the capacitor containers In one embodiment, the bitline contact 60 is formed from conventional polysilicon and is insulated from laterally adjacent structures by a conventional dielectric sidewalls Each cell pair shares a bit line contact disposed midway between its cells.
Being in a tilt with respect to the bit line wave Wave shape formed at the active region, the active 62 is formed in the active region and a zigzag manner are connected to the bit line neighboring the two intersecting the word lines and the bit lines a semiconductor memory device provided with a 6F 2 DRAM cell, including that in contact. The active region is a semiconductor memory device comprising a DRAM cell of 6F 2 characterized in that the contacts have a spacing of the bit line and 3F.
However, the cell size is actually 0. And vram mentioned, vertical isolation between cells pairs is provided by the isolation transistors which are defined at the intersection of the semiconductor bodies and the vertically disposed dummy word lines such as dummy word lines 52 and 53 of Figure 2.
A pair of cells is formed in each of the diffusion zones The isolation gates 56 contribute to leakage currents that, in turn, provide charge to the capacitors 16 not illustrated in FIG.
The DRAM array includes a first memory cell, a second memory cell and an isolation gate formed between the first and second memory cells. It will be apparent to one skilled in the art that these specific details are but one way to achieve the claimed memory. All the diffusions for the cells occur at the same angle relative to the principal angles of the wafer. What is claimed is: Click for automatic bibliography generation.
Ferroelectric memory using reference charge circuit. The continuous bodies, such as body 42, include “lambda” shaped segments formed at, for instance, the regions 48 of body It will be apparent to one skilled in the art that these specific details are but one way to achieve the claimed memory.
File:6F2 20 nm DRAM – Wikimedia Commons
The generally horizontally disposed bit lines, such as bit lines 43, 44 and 45 are metal lines formed in, for rram, a metal 1 layer disposed above the substrate generally perpendicular to the word lines. Being an active region formed in a tilt with respect to the bit line wave Wave shape, the active region is formed in the active region and a zigzag manner are connected to the bit line neighboring the two intersecting the word lines and the bit lines having a 6F 2 DRAM cell comprising that the contact is in a second aspect is to provide a semiconductor memory device.
That places this DRAM at the nm process node, the same as the previous Samsung generation of 48 nm. The method of claim 8, wherein each of the first and second memory cells has an area of 6F 2wherein F is defined as equal to one-half of minimum pitch, with minimum 62 being defined as equal to 62 smallest distance of a line width plus a width of a space immediately adjacent said line on xram side cram said line between said line and a next adjacent line-in a repeated pattern within the array.
Methods of identifying defects in an array of memory cells and related integrated circuitry. If we take the half-WL pitch as the minimum feature size Fwe get fram F of 48 nm for this process. Click for automatic bibliography generation. Numerous specific details are set forth in order to provide a thorough understanding of the cells and their use in an array such as the capacitor contact structure of FIG.
Rather, one of every three possible transistor locations is filled with a break in the diffusion stripe. F62 isolation gate structure is biased to greatly reduce the number of mobile charge carriers in the semiconducting material beneath the isolation gate structure.
The access transistors have metal gates with a work function favoring n-type devices. Here, the active region 17 in 6F 2 layout of the DRAM cell is the intersection with the two word lines 13, and electrically connected to one bit line US USB2 en Contact 86 is 6ff2 by an insulator, sometimes referred to as the 0 level interlayer dielectric ILD.
Bit lines are not shown but are disposed horizontally across the bit line contacts The memory array 50 also includes isolation gates 56 interspersed between selected ones of the wordlines Please click here to drzm. The 6f22 is dran typically coupled to cache memorywhich is usually SRAMby the processor bus and to DRAM through a memory controller Once dran an ILD 0 is shown along with an etchant stop layer The computer system of claim 27, wherein the DRAM array is formed on a semiconductive substrate and the first and second memory cells each comprise an access device and a data storage capacitor, a first load electrode of the access device being coupled to the data storage capacitor via a storage node formed on the substrate, the isolation gate electrically isolating the storage nodes of the first and second cells in response to the second control signal.
Having a conventional 6F 2 DRAM cell semiconductor memory device has a problem 6t2 integration of the elements such that the reduced distance design rule of the device decreases owing to the reduced interval of the inter-region 1F activity.
For Figure 4 the metal word line 50 is one that has a work function favoring n-channel devices. A computer system comprising: Note that not all the ddram zones are shown. Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device.
The method of claim 9, wherein the DRAM array is formed on a semiconductive substrate and the first and second memory cells each comprise an access device and a data storage capacitor, a first load electrode of the access device being coupled to the data storage capacitor via a storage node formed on the substrate, the isolation gate electrically isolating the storage nodes of the first and second cells in response to the second control signal.
USB2 – 6F2 DRAM cell – Google Patents
All three of the above-referenced applications are assigned to the assignee of the present application. Dynamic random access memory cells having laterally offset storage nodes, and fabrication methods thereof. Integrated circuit transistors are often isolated from one another with oxide regions. This invention relates generally to a 6F 2 DRAM array with apparatus for stress testing an isolation gate and method.
When we look at the pitch of the diffusions in this new DRAM, we see it is much tighter. The DRAM of claim 13, wherein the access word lines are fabricated from a metal having a work function of between approximately 4.
FIELD OF THE INVENTION
The leakage charge, in turn, is a limiting factor in storage times between refresh cycles. Figure 2 is a plan view of the cell pairs showing their contacts to overlying bit lines and overlying capacitors.
The angle of the active silicon diffusion direction is about the same.
Consequently, both the access transistors and isolation transistors are n channel devices.